Electrical Analysis and Low-Frequency Noise Investigations of the AlGaN/GaN High Electron Mobility Transistors
博士 === 國立成功大學 === 電機工程學系碩博士班 === 92 === In this dissertation, the electric characteristics of GaN-based HEMTs were studied and characterized. Different structures were adopted to improve the characteristics of devices and for the comparison. DC and RF measurements were made for device characterizati...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01611906694525627869 |