Investigation of InGaAsP Heterostructure Field-effect Transistors and Photodiodes
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this dissertation, we have successfully fabricated and investigated InP-based InGaAsP heterostructure field-effect transistors (HFET's) and p-i-n photodiodes (PIN-PD's) grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Th...
Main Authors: | Yen-Wei Chen, 陳彥瑋 |
---|---|
Other Authors: | Wei-Chou Hsu |
Format: | Others |
Language: | en_US |
Published: |
2005
|
Online Access: | http://ndltd.ncl.edu.tw/handle/18751726378451419336 |
Similar Items
-
Studies of the Electro-optic Properties of InP and InGaAsP Heterostructure by Photoreflectance
by: CHEN, WEI-JUANN, et al.
Published: (1998) -
The Fabrication of InGaP/InGaAsP Heterostructure Light-Emitting Diodes
by: Hsu, Tzu-Chieh, et al.
Published: (1997) -
Effects of 30 MEV electron irradation on InGaAsp LEDS and InGaAs photodiodes.
by: O'Reilly, Patrick J.
Published: (2012) -
Investigation of InP-based high electron mobility transistor using InGaAs and InGaAsP channel
by: En-Go Ro, et al.
Published: (2003) -
Fabrication of InGaAsP/InGaAsP Electro-absorption Modulator by Wet Etching
by: Dan-Long Lee, et al.
Published: (2004)