Implementation and Characterization of K-Band Power Amplifier
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === This thesis presents the implementation and characterization of a K-band power amplifier in form of Hybrid MIC (Microwave Integrated Circuit) and an IF amplifier for satellite communication systems. The design, simulation, and measurement for the two ampli...
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ndltd-TW-092NCKU54280512016-06-17T04:16:57Z http://ndltd.ncl.edu.tw/handle/77454863863252208895 Implementation and Characterization of K-Band Power Amplifier K頻段功率放大器之研製 Chien-Heng Wu 吳鑑恆 碩士 國立成功大學 微電子工程研究所碩博士班 92 This thesis presents the implementation and characterization of a K-band power amplifier in form of Hybrid MIC (Microwave Integrated Circuit) and an IF amplifier for satellite communication systems. The design, simulation, and measurement for the two amplifiers using pHEMTs and the aluminum substrate are reported. To offer maximum output power, the micro-strip line with load line method was employed to determine the optimize output resistance. The technology used for the IF amplifier to achieve low noise, high gain,and high power is proposed and discussed. Both the power and IF amplifiers have been successfully implemented. The key specifications obtained form measurements ar as follows: For this K band power amplifier, under the DC bias voltage is 8V with 800mA of the DC bias current, the frequency start at 21GHz and stop at 22.2GHz, the band width is 1.2GHz, , the small signal gain is 28dB, the output power is 28dBm, and the return loss less than -15dB. Shui-Jinn Wang 王水進 學位論文 ; thesis 82 en_US |
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碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === This thesis presents the implementation and characterization of a K-band power amplifier in form of Hybrid MIC (Microwave Integrated Circuit) and an IF amplifier for satellite communication systems. The design, simulation, and measurement for the two amplifiers using pHEMTs and the aluminum substrate are reported. To offer maximum output power, the micro-strip line with load line method was employed to determine the optimize output resistance. The technology used for the IF amplifier to achieve low noise, high gain,and high power is proposed and discussed.
Both the power and IF amplifiers have been successfully implemented. The key specifications obtained form measurements ar as follows: For this K band power amplifier, under the DC bias voltage is 8V with 800mA of the DC bias current, the frequency start at 21GHz and stop at 22.2GHz, the band width is 1.2GHz, , the small signal gain is 28dB, the output power is 28dBm, and the return loss less than -15dB.
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author2 |
Shui-Jinn Wang |
author_facet |
Shui-Jinn Wang Chien-Heng Wu 吳鑑恆 |
author |
Chien-Heng Wu 吳鑑恆 |
spellingShingle |
Chien-Heng Wu 吳鑑恆 Implementation and Characterization of K-Band Power Amplifier |
author_sort |
Chien-Heng Wu |
title |
Implementation and Characterization of K-Band Power Amplifier |
title_short |
Implementation and Characterization of K-Band Power Amplifier |
title_full |
Implementation and Characterization of K-Band Power Amplifier |
title_fullStr |
Implementation and Characterization of K-Band Power Amplifier |
title_full_unstemmed |
Implementation and Characterization of K-Band Power Amplifier |
title_sort |
implementation and characterization of k-band power amplifier |
url |
http://ndltd.ncl.edu.tw/handle/77454863863252208895 |
work_keys_str_mv |
AT chienhengwu implementationandcharacterizationofkbandpoweramplifier AT wújiànhéng implementationandcharacterizationofkbandpoweramplifier AT chienhengwu kpínduàngōnglǜfàngdàqìzhīyánzhì AT wújiànhéng kpínduàngōnglǜfàngdàqìzhīyánzhì |
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