| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this work, low temperature growth of carbon nanotubes (CNTs) by microwave plasma vapor deposition method using Fe-Ni Alloy catalyst for field emission display applications is presented.
Employing methane (CH4) as the reactant gas, CNTs were synthesized at a temperature in the range of 300~500°C at 30 torr using 40Å-thick Fe-Ni catalyst. Experimental results show that it would be impossible to grow CNTs at or below 300°C, because there is no effective nano-particle could be formed at 300°C with hydrogen plasma pretreatment for 10 min. However, it is found that CNTs could be synthesized at the temperature range of 350-500°C keeping the other parameters unchanged.
To realize low temperature growth of nanotubes using plasma CVD method, plasma was intentionally switched off during the growth process and the growth of CNTs has been successfully achieved at a temperature as low as 350°C. It is noted that the CNTs grown at 350°C have good field emission property with a turn-on field of around 1.1V/μm. Effects of the deposition time, the type and thickness of the metal catalyst and the reaction gas, etc., on the CNTs and their field emission properties are investigated and discussed.
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