Three Dimensional Simulation of FinFET
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === As the feature size of VLSI is scaling down, the influence of gate electrode on channel conductivity decreases significantly. In addition, the punch-through effect becomes much serious, which strongly degrades the device performance. To overcome such probl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58553091399916534057 |