Electrical Characteristics and Low Frequency Noise Investigations of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this thesis, high quality SiO2 layer was successfully deposited onto AlGaN as the dielectric layer for our AlGaN/GaN MOS-HFETs by photo-chemical vapor deposition (Photo-CVD) using D2 lamp as the excitation source. Compared with conventional AlGaN/GaN ME...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29983823911507132084 |