| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 ===
This thesis is to extract the parameters of InGaP/GaAs HBTs and toestablish the large signal model. We also consider the thermal effect when
devices operate and the application of power operation in nonlinear region.
We adopt Gummel-Poon model in this thesis and add some extra parameters to help us with the simulation of thermal effect to get the correct results in simulation. Besides, we also use some measurement techniques tofind out the external parasitic components to establish a accurate large signal model. With these parasitic components, we can verify the accuracy of ourmodel after large signal power measurement.
To get the values of every parameters in our model, we measure and extract parameters in the BJT model in IC-CAP. After these methods, we get initial values of four HBTs with different emitter area. Following, we extract the remainder parameters according to the thermal effect
curves.After that, we add the external parasitic components to the intrinsic device to establish a complete large signal model. At the same time, we
proceed the large signal power measurement of these four devices.
Finally, we compare the measurement results with simulations’ to verify the accuracy in simulate the characteristic of the InGaP/GaAs HBTs. Besides simulation, this thesis also describe detailed setps of measurements and calibrations from small to large signal. According to accurate calibrations and correct measurements, we can ensure our measured curves are reasonable and believable.
To sum up these results, we can simulate the characteristic of InGaP/GaAs HBTs correctly by the model we establish.
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