| Summary: | 碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 92 === ITO film has high properties of transmittance and conductance in the visible range. Because of its special optical and electrical properties, it is used for many applications. The resistivity of ITO film and the content of Sn have deep relationship and the resistivity increased while the content of Sn decreased in deposition process. The other hand, the roughness of ITO film is an important factor to optical-electrical devices performance. Therefore, we added different kinds of material (Sn, Ti, Cr) into the ITO film by co-sputtering system with various parameters to investigate properties of these films. In advanced, we also took the post-annealing experiments to expect having outstanding properties.
Experimental results revealed, when added tin, titanium and chromium with 7.5W, 5W and 15W, respectively, they could supply additional carries for ITO film to decrease resistivity. The minimum resistivity of the films were attained to 6.63×10-4Ω．cm, 6.64×10-4Ω．cm and 8.64×10-4Ω．cm, respectively, then the transmittance in visible range could also reached 80％. SEM and AFM surface morphologies show that added tin, titanium and chromium could restrain the clusters, the root-mean-square（Rrms） values were below 1nm.
Post-annealing experiments proved that added tin at low annealing temperature did not fit the B-M theory, then added titanium and chromium at 250℃ could supply a great quantity of carries. The carrier concentrations of the different films were all increased at 450℃, the minimum resistivity of the films reached 2.67×10-4Ω．cm. The root-mean-square values all decreased below 1.5nm, and the peak-to-vale（Rp-v）values also decreased. The transmittance in the visible range after post-annealing is increased, the maximum values attained 92％.
|
|---|
