Morphology and electrical properties of gas sensitive Ga2O3 nanowires film prepared by rtheotaxial growth and thermal oxidation
碩士 === 國立成功大學 === 化學工程學系碩博士班 === 92 === Ga2O3 possesses the semiconductor characteristic is stable at high temperature, and has been applied in detecting reducing gas recently. In the current study, Ga2O3 semiconductor thin film was prepared by rtheotaxial growth and thermal oxidation (RGTO) m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37734770803226815451 |
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