Study on Particle Adhesion and Removal Mechanisms in Post-CMP Cleaning Processes
碩士 === 國立中興大學 === 機械工程學系 === 92 === Particle removal by non-contact brush scrubbing for the post-CMP cleaning is investigated analytically. The removal s of SiO2 and Al2O3 particle adherent on SiO2 film coated on the wafer surface are considered. The cleaning fluid (H2O / NH4OH = 1:25 and...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00658036058947459418 |
| Summary: | 碩士 === 國立中興大學 === 機械工程學系 === 92 === Particle removal by non-contact brush scrubbing for the post-CMP cleaning is investigated analytically. The removal s of SiO2 and Al2O3 particle adherent on SiO2 film coated on the wafer surface are considered. The cleaning fluid (H2O / NH4OH = 1:25 and 1:200 ) flow between the brush and wafer surface is treated as a thin-layer flow. Detail of the flow field and its effect on drag force acting on adhered particles are discussed. In addition to drag force, the effects of the electrical double layer ( EDL ) and thermophoretic forces on particle removal are also considered. It was found that the dominant force to achieve particle removal by rolling mechanism is the drag force while the EDL and thermophoretic forces have insignificant effect on particle removing. Based on the results of this study, particles with submicron size can be removed from wafer surface by using higher brush rotation speed and ure DI water as cleaning fluid.
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