Growth silicon nanowires by ECR-CVD
碩士 === 國立中興大學 === 電機工程學系 === 92 === Silicon nanowires exhibit direct bandgap because of the quantum confinement effect. This unique optical property makes silicon nanowires having great potential for the application of opto-electronics devices. Silicon nanowires can be fabricated by various techniqu...
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| Format: | Others |
| Language: | zh-TW |
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2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79104180817859710576 |