| Summary: | 碩士 === 國立中興大學 === 電機工程學系 === 92 === Scanning capacitance microscopy (SCM) has been widely employed to measure the distribution of two-dimensional (2D) carrier concentration and has been a powerful tool for nano-characterization. However, SCM cannot provide the complete information on electrical properties of nano-devices, although SCM can produce 2D differential capacitance images. Scanning capacitance spectroscopy (SCS) extended from SCM allows us to position tip on an interested area and to acquire differential capacitance versus dc bias curves. For the characterization of nano-devices, SCS is a very powerful technique. For instance, we can study iron-contamination-induced interface defects by SCS. Iron is one of the commonly observed contaminants in semiconductor processes. Iron contamination can degrade silicon device’s performance and its yield. It is very important to realize the influence of iron contamination on nanometric area of semiconductor devices.
In this work, we have successfully developed SCS. With high sensitivity of SCS, we can distinguish the type of iron-contamination-induced interface defects and estimate the defect number.
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