Infrared spectroscopic study of Si-Ge epilayer quatum well structures

Infrared spectroscopic study of Si-Ge epilayer quatum well structures

碩士 === 輔仁大學 === 物理學系 === 92 === Attenuated Total Reflection (ATR) Fourier Transform Infrared Spectroscopy (FTIR) is utilized to study the properties of Si-Ge epilayer quantum well structured samples. Fresh made samples showed distinguished free carrier excitation from 500 -3000 cm-1 in s...

Full description

Bibliographic Details
Main Author: 陳冠夆
Other Authors: 林更青
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/85774337664515697266
id ndltd-TW-092FJU00198032
record_format oai_dc
spelling ndltd-TW-092FJU001980322016-01-04T04:09:15Z http://ndltd.ncl.edu.tw/handle/85774337664515697266 Infrared spectroscopic study of Si-Ge epilayer quatum well structures 矽鍺磊層量子井結構的紅外光譜研究 陳冠夆 碩士 輔仁大學 物理學系 92 Attenuated Total Reflection (ATR) Fourier Transform Infrared Spectroscopy (FTIR) is utilized to study the properties of Si-Ge epilayer quantum well structured samples. Fresh made samples showed distinguished free carrier excitation from 500 -3000 cm-1 in spite of the low boron doping amount. After one year storage in air, prominent Si-H and Si-O bands are observed. We suggest that the water vapor alters the properties of these molecular beam epitaxy (MBE) grown samples. 林更青 2004 學位論文 ; thesis 53 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 輔仁大學 === 物理學系 === 92 === Attenuated Total Reflection (ATR) Fourier Transform Infrared Spectroscopy (FTIR) is utilized to study the properties of Si-Ge epilayer quantum well structured samples. Fresh made samples showed distinguished free carrier excitation from 500 -3000 cm-1 in spite of the low boron doping amount. After one year storage in air, prominent Si-H and Si-O bands are observed. We suggest that the water vapor alters the properties of these molecular beam epitaxy (MBE) grown samples.
author2 林更青
author_facet 林更青
陳冠夆
author 陳冠夆
spellingShingle 陳冠夆
Infrared spectroscopic study of Si-Ge epilayer quatum well structures
author_sort 陳冠夆
title Infrared spectroscopic study of Si-Ge epilayer quatum well structures
title_short Infrared spectroscopic study of Si-Ge epilayer quatum well structures
title_full Infrared spectroscopic study of Si-Ge epilayer quatum well structures
title_fullStr Infrared spectroscopic study of Si-Ge epilayer quatum well structures
title_full_unstemmed Infrared spectroscopic study of Si-Ge epilayer quatum well structures
title_sort infrared spectroscopic study of si-ge epilayer quatum well structures
publishDate 2004
url http://ndltd.ncl.edu.tw/handle/85774337664515697266
work_keys_str_mv AT chénguānféng infraredspectroscopicstudyofsigeepilayerquatumwellstructures
AT chénguānféng xìduǒlěicéngliàngzijǐngjiégòudehóngwàiguāngpǔyánjiū
_version_ 1718159796390068224

Similar Items