Infrared spectroscopic study of Si-Ge epilayer quatum well structures
碩士 === 輔仁大學 === 物理學系 === 92 === Attenuated Total Reflection (ATR) Fourier Transform Infrared Spectroscopy (FTIR) is utilized to study the properties of Si-Ge epilayer quantum well structured samples. Fresh made samples showed distinguished free carrier excitation from 500 -3000 cm-1 in s...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85774337664515697266 |
| Summary: | 碩士 === 輔仁大學 === 物理學系 === 92 === Attenuated Total Reflection (ATR) Fourier Transform Infrared Spectroscopy (FTIR) is utilized to study the properties of Si-Ge epilayer quantum well structured samples. Fresh made samples showed distinguished free carrier excitation from 500 -3000 cm-1 in spite of the low boron doping amount. After one year storage in air, prominent Si-H and Si-O bands are observed. We suggest that the water vapor alters the properties of these molecular beam epitaxy (MBE) grown samples.
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