Study on NiTiO and CoTiO by low temperature process for MIM capacitance
碩士 === 逢甲大學 === 電子工程所 === 92 === 英文摘要 A novel high-k CoTiO and NiTiO was formed by low pressure Chemical vapor deposition (LPCVD). It can be use d for the interpoly dielectrics for nonvolatile memory, storage capacitor dielectric for DRAM and gate oxide for MOSFETs applications. In this work, for th...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/64337061970938692539 |