Study on NiTiO and CoTiO by low temperature process for MIM capacitance

• Main Authors: Chien-Hsin Chen, 陳莘傑
• Other Authors: none
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/64337061970938692539

碩士 === 逢甲大學 === 電子工程所 === 92 === 英文摘要 A novel high-k CoTiO and NiTiO was formed by low pressure Chemical vapor deposition (LPCVD). It can be use d for the interpoly dielectrics for nonvolatile memory, storage capacitor dielectric for DRAM and gate oxide for MOSFETs applications. In this work, for the first time, the CoTiO and NiTiO is fabricated by different low temperature(400℃, 450℃, 500℃, 550℃) directly oxidizing Co/Ti and Ni/Ti film for metal-insulation-metal (MIM) capacitor. I will investigate the electrical properties of metal/CoTiO/meatl and metal/NiTiO/metal for DRAM. PVD-TiN is used as a bottom electrode .Al is used as a top electrode. In this latter, it discusses with property of CoTiO and NiTiO films in different low temperature and study property by the directly oxidation after nitrogen implantation .We find that it will improve property by directly oxidation after nitrogen implantation .