Influence of Carrier Mobility by Implanting Different Nitrogen Dosages into Different Silicon Substrates
碩士 === 逢甲大學 === 電子工程所 === 92 === Abstract The subject of this thesis is to investigate the effect of carrier mobility (μ) by implanting different nitrogen dosages into different silicon substrates such as Si(100)、Hydrogen Annealed Wafer and Si(111) on PMOSFET. First of all, about the differ...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85050505849939170878 |