Influence of Carrier Mobility by Implanting Different Nitrogen Dosages into Different Silicon Substrates

• Main Authors: Pei-Tsang Ho, 何佩倉
• Other Authors: Wen-Luh Yang
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/85050505849939170878

碩士 === 逢甲大學 === 電子工程所 === 92 === Abstract The subject of this thesis is to investigate the effect of carrier mobility (μ) by implanting different nitrogen dosages into different silicon substrates such as Si(100)、Hydrogen Annealed Wafer and Si(111) on PMOSFET. First of all, about the different silicon substrates and nitrogen implantation dosages for the influence of carrier mobility, we find the value of carrier mobility of Si(111) split is about 60% higher than that of Si(100) and Hi-wafer splits. In addition, heavy nitrogen implantation dosage, up to 5×14 ions/cm2, into channel could improve the carrier mobility on Si(100) and Hi-wafer splits effectively, but degrade the carrier mobility on Si(111) split. Furthermore, the effects of carrier mobility on temperature and geometric figure of gate electrode were investigated. Results show the carrier mobility on Si(111) split has worse degradation proportion than that on Si(100) and Hi-wafer splits due to the high temperature measurement. Besides, the carrier mobility on Si(111) split would be worse degraded as a higher width/length (or length/width) ratio. Therefore, a suitable W/L (or L/W) ratio is needed to avoid decreasing the operation speed on Si(111) split MOSFET.