Low scratch of the copper CMP with nano polystyrene
碩士 === 逢甲大學 === 化學工程學所 === 92 === Abstract Chemical Mechanical Polishing (CMP) is the only method meeting the global planarization requirement despite the drawback such as scratches, dishing, and bad uniformity. The purpose for this study is to investigate the scratch from the planarization pro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48553550362932138227 |