Low scratch of the copper CMP with nano polystyrene

• Main Authors: Yit-Tsong Chen, 陳枻璁
• Other Authors: Chien-Hsing Hsu
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/48553550362932138227

碩士 === 逢甲大學 === 化學工程學所 === 92 === Abstract Chemical Mechanical Polishing (CMP) is the only method meeting the global planarization requirement despite the drawback such as scratches, dishing, and bad uniformity. The purpose for this study is to investigate the scratch from the planarization process in copper damascene CMP. In order to prevent from scratch during polishing, nano-particles of polystyrene were prepared by emulsion polymerization. Polystyrene was observed spheric and well dispersed from TEM. It was used as the polishing abrasive for copper CMP. The effects of oxidant (H2O2) concentrations, additive (citric acid ) concentration, and solid contents of polishing abrasive on polishing performance was studied. The results showed that better surface planerization was obtained by using polystyrene than than ceramic powder as the polishing abrasive in CMP. On the other hand, higher solid contents raises the copper removal rates. The addition of citric acid speeds the dissolution of copper oxide and increases the removal rates. The results were observed less scratch or scratch-free from the micrograph taken on the AFM surface after CMP. The findings about the scratchs of copper film after CMP is significant progress for the nano-particles in polymers application.