Improving the Electrical Characteristics of AlGaInP Laser Diode by Oxide Annealing
碩士 === 大葉大學 === 電機工程學系碩士班 === 92 === ABSTRACT In this thesis，the silicon dioxide is annealed by furnace so that the density of silicon dioxide is raised and improving the performance of the AlGaInP laser diode. In addition，we also investigate the dependence of annealing temperature with d...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10307667839525617114 |
| Summary: | 碩士 === 大葉大學 === 電機工程學系碩士班 === 92 === ABSTRACT
In this thesis，the silicon dioxide is annealed by furnace so that the density of silicon dioxide is raised and improving the performance of the AlGaInP laser diode. In addition，we also investigate the dependence of annealing temperature with devices .In this study，the nitrogen gas is introduced to anneal silicon dioxide and the annealing temperature is changed from 300℃to 450℃to find the optimum annealing condition.
From our study，the threshold current Ith is reduced with increasing of the annealing temperature; Ith is 32.82mA and 24.83mA at non-annealed and 450℃ annealed sample， respectively. The slope efficiency is also increased from non-annealed sample of 0.57 to 300℃annealed sample of 0.8. So that，the oxide annealing is effectively to reduce the threshold current and increase the slope efficiency.
Furthermore，we change the operation temperature to investigate the temperature stability of AlGaInP laser diode ; we obtain this device can normally operate at 90℃and the characteristic temperature To is increased from 110.9K for non-annealed sample to 116.6k for 450℃annealed sample. Thus，the high temperature annealed sample exhibits high stability for temperature.
For our knowledge，this thesis is the first time to improve the performance of AlGaInP laser diode by oxide annealing.
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