Optoelectric investigation of GaInP grown on GaAs substrate
碩士 === 中原大學 === 應用物理研究所 === 92 === Abstract Semiconductor material GaInP is one of the most important ternary Ⅲ-Ⅴ alloy systems, which has been studied extensively mainly for its novel physical properties and great potential usefulness to use in optoelectric and electric devices. The GaInP sample h...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96r4f4 |