| Summary: | 碩士 === 中原大學 === 化學工程研究所 === 92 === In this study, a two-dimensional planar inductively coupled plasma reactor model was established to calculate the variations of the electron, ion, and radical concentration of Ar and CF4 plasma at the substrate surface as a function of the rf power, pressure, coil design and chamber geometry. Langmuir probe was used to measure the radial profiles of electron density and temperature and the data were compared with model results.
In the Ar model, as power increases, the electron density increases but the radial uniformity decreases; while pressure increases, electron density and its radial uniformity increase. The sloping of coil and the dielectric layer is useful in improving the plasma uniformity but the electron density is decreased. The plasma density and uniformity increase as a result of the increase of chamber height. In order to provide high plasma density and uniformity, as increasing the chamber radius, the rf power and the number of coil turns must be increased at the same time.
In the CF4 model, the uniformity increases but the electron density decreases at low power and low pressure. The densities of radical and positive ion increase with the power, but the negative ion density decrease with power. With the increasing pressure, the densities of radical and negative ion increase, but positive ion decreases. About radial concentration profile, the positive ion is more uniform than other species.
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