Tango-RM:An Enhanced Permutation Scheme for Resistor-String Successive Reference Generation

• Main Authors: Mark Lin, 林智勝
• Other Authors: J. E. chen
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/98449197561059230468

碩士 === 中華大學 === 電機工程學系碩士班 === 92 === Resistor-string successive reference generator is an intrinsic, monotonic and low energy circuit structure that can output voltage in continuous time. Thus, it is usually used to the applications which need high speed and high accuracy analog-to-digital and digital-to-analog converters, such as image signal process, application of the radar, and RF control etc. Resistor string with ordered permutation is a non-ideal circuit structure, since it will result in the increase of nonlinearity. The increase of resistor matching does not always guarantee the increase of linearity. Contrarily the matching resistors will increase the accumulate errors in ordered-permutation resistor string structure. The use of spatial correlation will be taken into account in the resistor layout permutation. The unit resistance is implemented in two kinds of resistor composition: 1. One resistance composed by a single resistor; and 2. One resistance composed by multiple resistors. In the first kind of composed resistors, Tango route marching (Tango_RM) permutation can improve the nonlinearity of accumulate errors down to 0.29 LSB in a 6-bit resistor string structure at 0.9 correlation coefficient. In the last kind of one resistance composed by four resistors, Tango route marching permutation can further improve the nonlinearity of accumulate errors down to 0.14 LSB in the 6-bit structure.