| Summary: | 碩士 === 長庚大學 === 電子工程研究所 === 93 === Today’s power amplifiers are implemented in GaAs, HBT, LDMOS, and BiCMOS technologies. However, more and more communication system is fabricated in CMOS technology. For this reason, a single chip transceiver includes an integrated CMOS power amplifier. In this work, design and implementation of a power amplifier are described.
This paper presents a 2.4GHz CMOS linearized power amplifier with variable output power fabricated in TSMC 0.18μm 1P6M CMOS process. The PA has linear power gain of 17.54dB, output P1dB of 13.64dBm and power added efficiency (PAE) of 32.86%, and linearized with multi-gate auxiliary transistor. And the controllable output power can reduce the effect to human causing by the EM wave.
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