DRAM Leakage Current and Retention Time Improvement by Back-end Passivation Film Optimization
碩士 === 長庚大學 === 電子工程研究所 === 92 === DRAM data retention time has nearly doubled for each generation due to the demand of high density for high speed and low power DRAMs. However, the electric field in memory cell is also becoming stronger and leakage current has been increasing with each...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/10750742516799731979 |