| Summary: | 碩士 === 國立中正大學 === 物理系 === 92 === Using Si (111) as a substrate, we have deposited carbon atoms on the surface through MBE in three different growth methods : (1) Evaporating Co atoms on Si（111）-5×2/Au to form Co islands with narrow size distribution, then depositing carbon atoms, (2) Evaporating Co atoms and carbon atoms layer by layer on Si（111）-7×7 reconstruction, and (3) Using SiO2 as a buffer layer to evaporate Co atoms and carbon atoms on the surface.
By controlling the substrate temperature and the duration of the surface being heated to elevated temperature, we were able to vary the structure of carbon covered surface, which was examined by STM. Our results show
1.When the surface was heated to high temperature, Co and carbon segregate and form individual clusters.
2.Rod—like structures have been observed on the surface, which at the moment we are not able to identity their property.
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