| Summary: | 碩士 === 國防大學中正理工學院 === 應用化學研究所 === 92 === Electroless deposition is apparently one of the most important plating processes in use today. However, it has long been thought to be low deposition rate, poor bath stability in the absence of stabilizers, substrate-selected deposition, and difficulty in vias filling as performed to use in microstructures. A novel process called Non-Isothermal Clearance Deposition (NITCD) proposed by our work can be characterized by the selective reduction of metal ions only within a reaction zone nearby the heated substrates with continued deposition on the substrate through the catalytic action of deposit itself. By adjusting the substrate temperature and a designed clearance, it allows the deposition temperature and bath temperature to be operated independently. High temperature in deposition zone favors generating nuclei with continued anchoring onto substrates; meanwhile, low temperature in bath could effectively restrain side reactions even in the absence of stabilizers. Results indicated that it could exhibit a remarkable ability to deposit a quasi-regular metallic dot or thin film on conducting substrates but not limited to insulating substrates as well as semiconductors. Without any sensitization and activation processes prior to deposition, a nickel and copper film can be successfully deposited on all kinds of substrates.
The nucleation mechanism of the NITCD was discussed to elucidate how it is working and how it is functioning. The effects of the chemical additives are also studied in the NITCD system. As a result, the additives are able to change actually the deposition behaviors of the NITCD system by the nonlinear diffusion mechanism. Moreover, the additive can help the NITCD to reach the free-void microstructure of the metal parts.
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