Summary: | 碩士 === 國防大學中正理工學院 === 兵器系統工程研究所 === 92 === The CdS and CdTe Ⅱ-Ⅵ class compound semiconductor material is one of the emerging materials for solar cell applications,and has received considerable attention in recent years.The first factor,it has bionic photoelectricity property. They exhibit lone term stability without any signs of degradation.Of the techniques that have been used to fabricated thin films of material including,for example chemical vapor deposition (CVD),spray, prolysis, sputtering , vacumn evaporation, selenization of metallic films and electrodeposition. Among them, electrochemical techniques provide several advantages, including low temperature processing, arbitrary substra- te shapes, controllable film thickness and morphology, and potential low produ- ction cost. Electrodeposition is of particular interest in offering the greatest potential in terms of low costs and inexpensive deposition system. Consequently, preparation of Ⅱ-Ⅵ class compound semiconductor material with the electrochemical technique has become increasingly popular nowadays.
In this thesis, compound semiconductor material were prepared with the electrodeposition process. The substrate is ITO(Indium Tin Oxide Glass) and the semiconductor multiple-layer is alternating CdS and CdTe thin films. ,the major disscuss in electrodeposition is pressure,current,electrolysis juice pH,deposition time and ions.
The optical properties, surface morphology, composition and composition distribution of the resulting compound semiconductor material were characterized by SEM and EDS, respectively.
I hope to look for the best electrodeposition theory parameters from correlative experiment manufacturing process. By way of correlative experiment microanalytical structure to discuss the difference between parameters. To expect will be contribution in the new military solar cells.
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