The Research on the Reliability of MOS Capacitor of High-k HfO2 Ultrathin Film Deposited on Different Substrates
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 91 === As the device dimension was scaling down, high mobility substrate and high dielectric oxide are attracting great interest as a replacement for silicon-based devices. Among the many candidate materials, HfO2 has been highlighted due to its good device char...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63475476208632377272 |