| Summary: | 碩士 === 國立臺北科技大學 === 材料及資源工程系碩士班 === 91 === Copper with its unique electric properties, such as lower resistance than Al and a high electromigration resistance, has been accepted as the material for the interconnect in high performance integrated circuits (ICs). Because Cu is not suitable for reactive ion etching (RIE), a Damascene or dual Damascene process is used to establish the Cu interconnects. The chemical-mechanical polishing (CMP) of Cu is the most crucial step to define the Cu Damascene structure. However, after the CMP process, a large amount of contamination remains on the wafer surface, which must be eliminated. These contaminants include residual slurry abrasives, undesired metallic ions (Cu) and other chemical components. Among the contaminants, Cu ion is one of the major concerns.
Recently, ozone has been used to remove the organic residual in the semiconductor process. Ozone is a strong oxidant, which can oxidize many organic compounds including photoresistant. Therefore, the application of ozone in semiconductor process has become a important issue. In this study, ozone was used to modify the surface property of Amberlite XAD-4 resin. Due to strong oxidizing ability, the surface structure of Amberlite XAD-4 resin will be partially oxidized to contain oxygen donor. Since ligand containing oxygen donor group can complex with Cu ions, the surface modified Amberlite XAD-4 resin can be used to remove Cu ion from the semiconductor process. In this study, the ozonization conditions of ozone modification were identified. It was identified that the functional groups on the surface of modified Amberlite XAD-4 resin contains carboxylic acid. The effect of the functional groups on the adsorption of Cu ion was further demonstrated.
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