Design, Simulation, and Implementation of Preamplifiers and Power Amplifiers

• Main Authors: Wang Chun-Chieh, 王俊傑
• Other Authors: Yu Cheng-Cheh
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/73501347088585577457

碩士 === 國立臺北科技大學 === 電腦通訊與控制研究所 === 91 === This thesis explores design, simulation, and implementation of preamplifiers and power Amplifiers. Utilizing adequate RF measurement techniques, RF essential parameters of the FR4 printed circuit board, including dielectric constant (εr), attenuation constant (α), and phase constant(β) are determined. These crucial parameters play key roles in RF amplifier designs. RF preamplifiers are designed for 433.92 MHz, 2.4 GHz, and 5.79 GHz. The preamplifier operating at 433.92 MHz uses chip LC components to achieve impedance matching and chip resistor to accomplish amplifier stability. The 2.4 GHz preamplifier employs transmission line sections and chip capacitor to complete impedance matching, achieving maximum output power transfer. Thirdly, the amplifier operating at 5.79 GHz utilizes distributed elements only to achieve impedance matching and reliability improvement. As to the RF power amplifier, external matching circuit of 2 WLAN power amplifier RFICs, G-plus GP1202 and GP1209, having 16 pins and 3×3 mm2 of area are designed. The maximum output powers acquired are 22 dBm and 25 dBm, respectively. Finally, a 2.45 GHz class-A 2-stage discrete power amplifier consisting of Agilent HEMT JFET and Mitsubish GaAs MESFET are designed. Input and output impedance matching is first accomplished using small-signal method and the all the passive matching component values are fine tuned to obtain maximum output power from this 2-stage discrete power amplifier.