Studuy on low temperature field assisted aluminum induced crystallization of amorphous silicon film

• Main Author: 陳彥甫
• Other Authors: 許進明
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/05314582700060393243

碩士 === 南台科技大學 === 電機工程系 === 91 === In this thesis, Aluminum Induced Crystallization (AIC) method was employed to crystallizeα-Si films for low temperature Poly-Si (LTPS) application.α-Si/Al/Glass structures with various thickness ratios were prepared using PECVD and RF magnetron sputter forα-Si and Al deposition respectively, followed by a thermal annealing in N2 ambient for 5~720 min. Results from XRD revealed that the optimumα-Si/Al thickness was 2000Å/500Å for the AIC, at highα-Si deposition rate. The complete crystallization time was found to be 30min at the annealing temperature of 550oC, and the minimum crystallization temperature was found at 450oC for 30min annealing. To investigate the electric field assistant crystallization effect, two types of field assisted method were employed. A novel non-contact type field assisted AIC process was introduced to crystallize α-Si films, but preliminary analysis show that this method had no significantly enhancement on the AIC for the applied electric field up to 7000V/cm.On the other hand, with a contact type field assisted AIC process it was found that the crystallization enhancement could be observed at the electric field of 100V/cm.