High Frequency Noise in Heterojunction Bipolar Transistors(HBTs)
碩士 === 中國文化大學 === 材料科學與製造研究所 === 91 === Hawkins’ model was developed by R. J. Hawkins in 1977 and has been used in study noise in bipolar junction transistors ( BJTs ), primarily. In recent years, most of researchers are still using Hawkins’ model to study noise in heterojunction bipolar transistor...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77302158691315921099 |