| Summary: | 博士 === 國立臺灣大學 === 電機工程學研究所 === 91 === In order to fabricate a smaller, lighter and thinner mobile unit, a low noise, low power consumption and multi-band transceiver is necessary. Although CMOS RFIC has the advantage of high integration, it suffers from the serious noise interference. Especially, when the frequency goes higher and higher, the noise would become larger and larger.
Our design goal is to achieve low noise and low power multi-band RFICs. In order to accomplish such a high performance RFIC, the basic physics mechanism must be explored. We will derive the equations and explain the measured results. In the chapters (2,3&4), we talk about the active and passive devices. Passive devices contain the inductor and capacitor, which are extracted the physical model and are optimized for Q factor. Active device is the NMOSFET, which not only amplifies signal and also generates noises. We propose a new extraction method for the channel noise coefficient of the NMOSFET. In the chapters (4,5&6), we exhibit the LNA, VCO and Mixer RF circuits, which are all very low noise and low power. In the chapter 7, the RF-MEMs technologies are used to improve the RFIC. We develop the RF-MEMs processes and prove it is indeed effective to improve the performance of our RF circuits. In the final chapter, we propose a novel multi-band LNA, which can handle 2.4/5.2/5.7 three bands for WLAN applications. Then we extend this LNA to a multi-band receiver and another 5GHz CMOS transceiver is also discussed here.
In conclusion, our design philosophy is to explore from the bottom-level devices, to middle-level circuits and to top-level system Step by Step.
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