Fabrication of Resonant-Cavity Light-emitting Diode
碩士 === 國立臺灣大學 === 電子工程學研究所 === 91 === This thesis presents the fabrication and optoelectronic properties of 870nm resonant-cavity light-emitting diodes (RCLED). The device structure of the RCLED is composed of a 30-pair AlGaAs bottom DBR reflector, a 1-λ cavity with 3 InGaAs quantum wells embedded...
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15126301381763027165 |