Illumination Effect on The Characteristics of MOS Capacitors with Non-uniform Substrate Doping

• Main Authors: Jung-Hua Chen, 陳榮華
• Other Authors: Jenn-Gwo Hwu
• Format: Others
• Language: en_US
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/13127339042053352957

碩士 === 國立臺灣大學 === 電子工程學研究所 === 91 === The monitoring of the electrical properties of devices in integrated circuit is strong needed as the MOSFET dimension shrinks continuously. The illumination effect on the characteristics of MOS capacitors with non-uniform substrate doping is studied in this thesis. To start with, the process flow of the fabricated MOS capacitor with non-uniform substrate doping is introduced in chapter 1. The function of ion implantation is explained in this chapter. The C-V and J-V curve characteristics of MOS capacitors with non-uniform substrate doping are introduced in chapter 2. We design six illumination conditions to examine the illumination effect on the characterists of MOS capacitors with non-uniform substrate doping in chapter 3. We measure and study the result of J-V and C-V curves. The J-V curve is composed of accumulation 、depletion 、deeper depletion ,and strong inversion regions 。We can find that the gate current in depletion region is strong correlated to the width of depletion region. The gate current will increase when the width of depletion region is increased. When the width of depletion region is decrease ，gate current will reduce .The width of depletion region is affected by the source and drain region . It is found that under certain illumination，the gate current decreases in depletion region but increases in deeper depletion region 。The change in deeper depletion region is related to the change in depletion region .The illumination intensity is another key factor that affect the depth of depletion region and gate current in deeper depletion region。The relation of those factors we will be further discussed in chapter 3. Finally, We will give a conclusion and a propose for the future work in chapter 4。