The fabrication of Cu nanowire

• Main Authors: Hong-Da Chang, 張宏達
• Other Authors: Fon-Shan Huang
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/45817584357578501894

碩士 === 國立清華大學 === 電子工程研究所 === 91 === We developed the electrochemical displacement method for Cu nanowire formed by replacing the silicon and the amorphous-silicon on SiO2/Si structure with electron beam lithography. The various line width from 0.1μm to 0.2μm were patterned by e-beam resist DSE1010 exposed with dose 6mC/cm2. Oxygen-plasma treatment is used to transfer the surfaces of the e-beam resist DSE1010 from hydrophobia to hydrophilia. The width of the e-beam resist DSE1010 diluted with tolene (1:1) after 30w oxygen-plasma treatment with time 30 sec was 0.18μm. The resist flow process can reduce the line width to 78nm. Then, The copper nanowire can be fabricated by immerse the silicon and amorphous- silicon into solution mixed with cupric sulphate (CuSO4˙5H2O)with 4g/L and various HF atomic percent. We successfully fabricated Cu nanowire with a width/height of 78nm/53 nm and 98nm/68nm by replacing silicon atoms from crystal silicon wafer and amorphous-silicon, respectively.