Study on High Linearity High Gain SiGe BiCMOS Power Amplifier
碩士 === 國立清華大學 === 電子工程研究所 === 91 === In this thesis, a 2.4 GHz ISM band class AB RF power amplifier was implemented with tsmc 0.35μm SiGe BiCMOS technology. The designed linear gain, output 1dB gain compression point and power added efficiency (PAE) are above 30 dB, 27dBm and 30% respecti...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41007293754889555950 |
| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 91 === In this thesis, a 2.4 GHz ISM band class AB RF power amplifier was implemented with tsmc 0.35μm SiGe BiCMOS technology. The designed linear gain, output 1dB gain compression point and power added efficiency (PAE) are above 30 dB, 27dBm and 30% respectively under a supply voltage of 3.3 with the help of a diode linearizer. Harmonic components were suppressed more than 35dBc and input VSWR is below 2.
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