Fabrication and Characterization of Organic Inorganic Field-Effect Transistors （OIFETs）
碩士 === 國立清華大學 === 電子工程研究所 === 91 === Abstract Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the solution processability of organic materials. A new thin-film field-effect transistor having an organic-inorganic hybr...
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| Format: | Others |
| Language: | zh-TW |
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2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94693276691288058800 |
| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 91 === Abstract
Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the solution processability of organic materials. A new thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated in almost atmospheric environment for the first time. This all new hybrid semiconducting perovskite (C6H13NH3) 2 (CH3NH3 )Pb2Br7 shows the field-effect characteristic with mobility of 0.182 cm2/V-s and 0.00254 cm2/V-s in spin-coated thin films and casted films, respectively.
The new device OIFET has different characteristic by different film growth , showing that the field effect mobility is influenced strongly by the ordering and crystalline of hybrid film. The ION/IOFF ratio are very low both in spin coated and casted film. The leakage current is still large at positive gate voltage , especially in casted film. It maybe due to the problem about the remove of solvent and poor interface. The large density of trap at interface make the hybrid fail to form accumulation and depletion mode. Apply appropriate annealing and add a adhesion layer before spin coating hybrid maybe can improve this disadvantage.
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