High quality SGOI (SiGe-On-Insulator) substrate preparation using Ge-Condensation technology
碩士 === 國立中山大學 === 電機工程學系研究所 === 91 === In our thesis, we develop a modified fabrication method based on Ge condensation mechanism to fabricate SGOI (SiGe-on-insulator) Wafer. The advantages of this technique are as follows; (1) Low fabrication temperature. (2) Smooth SiGe/SiO2 interface without usi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19807473612289307398 |