Investigation of GaN semiconductor using Hall measurement

碩士 === 國立中山大學 === 物理學系研究所 === 91 === In the study we employ Hall measurements to analyze that the GaN semiconductor by MBE. In the study we analyze the parameters of low temperature buffer layer growth, include the temperature of growth buffer layer, buffer layer thickness, growth rate and N/Ga rati...

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Bibliographic Details
Main Authors: Keng-Lin Chuang, 莊耿林
Other Authors: I-Kai Lo
Format: Others
Language:zh-TW
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/43208056503813646254

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