| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 91 === In the study we employ Hall measurements to analyze that the GaN semiconductor by MBE. In the study we analyze the parameters of low temperature buffer layer growth, include the temperature of growth buffer layer, buffer layer thickness, growth rate and N/Ga ratio on growth low temperature. From the result of experiment we know the higher temperature of growth buffer layer, thinner of buffer layer, slower rate of growth and lower ratio of N/Ga growth can get the superior quality GaN semiconductor. In study the GaN epitaxy layer, we analyze that N/Ga ratio of GaN epitaxy layer and indium during the epitaxy process. From the result of experiment we know the ratio of N/Ga at 22.5 is the best quality and to increase the indium content can improve the GaN of quality.
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