Optical Spectroscopic Study of InGaAsN Semiconductor Quantum Wells

碩士 === 國立中山大學 === 光電工程研究所 === 91 === From PL spectrum of InGaAsN LD structures grown by MOCVD and MBE, we observe remarkable red shift of the wavelength after the addition of small concentration of nitrogen. For MOCVD growth, the concentration of nitrogen increases from 0.3% to 0.5%, and the wavelen...

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Bibliographic Details
Main Authors: Po-Ping Shen, 沈柏平
Other Authors: Tao-Yuan Chang
Format: Others
Language:zh-TW
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/26065608713400750019