Optical Spectroscopic Study of InGaAsN Semiconductor Quantum Wells
碩士 === 國立中山大學 === 光電工程研究所 === 91 === From PL spectrum of InGaAsN LD structures grown by MOCVD and MBE, we observe remarkable red shift of the wavelength after the addition of small concentration of nitrogen. For MOCVD growth, the concentration of nitrogen increases from 0.3% to 0.5%, and the wavelen...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2003
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Online Access: | http://ndltd.ncl.edu.tw/handle/26065608713400750019 |