Manufacture and Analysis of Titanium Dioxide thin film

• Main Authors: Biing-Lin Jang, 簡炳林
• Other Authors: none
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/43881343917670052695

碩士 === 國立中央大學 === 機械工程研究所 === 91 === Microelectromechanical systems is a new field in the world now,it use micro-technology,system technology,materials and effect technology, manufacture microsensors,signal processor,and microactuators.The research I make is to study "use thermal oxidation method to form titanium dioxide and its materials character and analysis" .The experiment parameters including:temperature, oxygen flow,pressure.The main parameters are temperature,oxygen flow ,and pressure affects small.When titanium dioxide thin film is formed, furthermore,to measure resistivity,measure contact angle,analyze XRD,analyze FTIR.After resistivity measurement,if titanium deposit on silicon substrate directly,then resistivity increases when oxygen flow increases.If titanium deposit on silicon substrate directly,then resistivity increases when temperature increases,but sometimes has exception when temperature is 600℃,because has formed titanium silicide.If titanium deposit on oxide,compare with titanium deposit on silicon substrate,after oxidation,the former has higher resistivity.According to contact angle measurement ,if protein can react with titanium dioxide,the protein must be hydrophilic,otherwise,if it is hydrohobic,it can`t react with titanium dioxide. After measurement,the PVD method has smaller contact angle than CVD method.It shows PVD method has better hydrophilic.According to XRD analysis, when 2Θ=25°,it has anatase(101)peak,when 2Θ=48°,it has anatase(200)peak,when 2Θ=54°,it has anatase(105)peak.Finally,after FTIR analysis, CVD method has stronger peak than PVD method,when temperature increase,no matter PVD method or CVD method,they have stronger peak.