Polarization field effects on group III-nitride semiconductors
博士 === 國立中央大學 === 物理研究所 === 91 === This dissertation comprises the optical characteristic of p-i-n In0.23Ga0.77N/GaN multiple quantum wells (MQWs) and p-i-n InGaN/AlInGaN MQWs grown by metalorganic chemical vapor deposition method. The main works is divided to the following parts. The optical prop...
Main Authors: | Chee-Yuen Lai, 賴志遠 |
---|---|
Other Authors: | T-M Hsu |
Format: | Others |
Language: | en_US |
Published: |
2003
|
Online Access: | http://ndltd.ncl.edu.tw/handle/92523669138783374519 |
Similar Items
-
Optical characterisation of group III-nitride semiconductors
by: Othick, Catherine Ann
Published: (2011) -
Optical studies of group III-nitride semiconductors
by: Hammersley, Simon
Published: (2012) -
Polarization Effects in Group III-Nitride Materials and Devices
Published: (2012) -
Optoelectronic Properties of III-NitrideSemiconductor
by: Chih-HsuehLan, et al.
Published: (2011) -
The growth and fabrication study of the III-Nitride semiconductors blue and green light emitting diode by MOVPE
by: Wei-Chih Lai, et al.
Published: (2001)