| Summary: | 碩士 === 國立交通大學 === 高階主管管理學程碩士班 === 91 === This thesis reports on a strategic analysis of gallium arsenide (GaAs) based power amplifier(PA) industry, including the three key segments, namely, Metal Semiconductor Field Effect Transistor (MESFET), Pseudo-morphic High Electron Mobility Transistor (PHEMT), and Hetero-structure Bipolar Transistor (HBT). The objective of this research is to identify those factors required for industrial competitiveness, or industrial innovation requirements (IIRs).
A framework of portfolio analysis is applied to address the competitive and strategic contexts of the industry, where the technology life-cycle and industrial value chain will, respectively, be employed as the vertical and horizontal axes.
Result reveals that Taiwan’s gallium arsenide PA industry is presently in the growth stage. Within 5 years, the industry is expected to advance towards the design stage in the value chain and the developed stage in the technology life cycle. The current requirements in industrial innovation are: innovative spirits, support from the national policies, cost advantages in fabrication and R&D management, specialized research facilities, integrated industrial clusters, and effiecient capital market systems. In the next five years, the priority of developments should retain: scale economies, flexibile operation in strategic alliances, marketing specialists for expanding international markets, the establishments of customer relations and customer oriented management, and capital systems for long term needs.
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