Study of GaN Light Emitting Devices Fabricated by Laser Lift-off Technique
博士 === 國立交通大學 === 光電工程所 === 91 === The GaN-based wide band gap semiconductors have been employed for blue light emitting diodes (LEDs) and laser diodes. These devices were grown heteroepitaxially onto dissimilar substrates such as sapphire and SiC because of difficulties in the growth of bulk GaN. H...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57175946587143102217 |