Investigation of Direct Tunneling Induced Reliability Issues in Ultra-Thin Oxide CMOS Devices
博士 === 國立交通大學 === 電子工程系 === 91 === The use of gate oxides in direct tunneling regime is required for sub-100nm CMOS devices. While, a great reliability concern induced by direct tunneling in such thin oxides is being aroused. The objective of this dissertation is to investigate...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77877488362038133452 |