The investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process

碩士 === 國立交通大學 === 電子工程系 === 91 === When the gate oxide thickness downs to 1.0 nm regime, the direct-tunneling current becomes main key issue for high-performance CMOS beyond 0.1μm. In my research work, we have developed high-quality silicon oxynitride (SiON) with physical thickness 1.0 nm...

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Main Authors:	Chu-Feng Chen, 陳巨峰
Other Authors:	Kow-Ming Chang
Format:	Others
Language:	zh-TW
Published:	2003
Online Access:	http://ndltd.ncl.edu.tw/handle/52171899853973658131

id	ndltd-TW-091NCTU0428085
record_format	oai_dc
spelling	ndltd-TW-091NCTU04280852016-06-22T04:14:26Z http://ndltd.ncl.edu.tw/handle/52171899853973658131 The investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process 以快速升溫氧化技術成長1.0nm高品質氮氧化矽閘極絕緣層及其特性研究 Chu-Feng Chen 陳巨峰碩士國立交通大學電子工程系 91 When the gate oxide thickness downs to 1.0 nm regime, the direct-tunneling current becomes main key issue for high-performance CMOS beyond 0.1μm. In my research work, we have developed high-quality silicon oxynitride (SiON) with physical thickness 1.0 nm (EOT = 0.86 nm) gate dielectric using rapid thermal processing (RTP). The 1.0 nm ultra-thin oxynitride was grown by rapid thermal process in N2 and O2 mixed gas ambient, in term of oxidation temperature, process time control and the flow ratio of N2/O2 mixed gas as comparison with O2 grown oxide. The thickness of oxynitride film is determined by ellipsometer and verified by high resolution TEM (HR-TEM). The experiments show that 1.0nm SiON oxynitride grown by RTP at 900℃ for 15 sec has the lowest density of the interface states and the leakage current is two orders lower than that of a RTO sample. This excellent experimental result is due to a proper amount of nitrogen incorporated in the thin oxynitride film during RTP oxidation process in N2/O2 mixed gas ambient. The nitrogen incorporated can improve the integrity of thin oxynitride film and the interface state between the Si-substrate and ultra-thin oxynitride film. Kow-Ming Chang Cheng-May Kwei 張國明桂正楣 2003 學位論文 ; thesis 42 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立交通大學 === 電子工程系 === 91 === When the gate oxide thickness downs to 1.0 nm regime, the direct-tunneling current becomes main key issue for high-performance CMOS beyond 0.1μm. In my research work, we have developed high-quality silicon oxynitride (SiON) with physical thickness 1.0 nm (EOT = 0.86 nm) gate dielectric using rapid thermal processing (RTP). The 1.0 nm ultra-thin oxynitride was grown by rapid thermal process in N2 and O2 mixed gas ambient, in term of oxidation temperature, process time control and the flow ratio of N2/O2 mixed gas as comparison with O2 grown oxide. The thickness of oxynitride film is determined by ellipsometer and verified by high resolution TEM (HR-TEM). The experiments show that 1.0nm SiON oxynitride grown by RTP at 900℃ for 15 sec has the lowest density of the interface states and the leakage current is two orders lower than that of a RTO sample. This excellent experimental result is due to a proper amount of nitrogen incorporated in the thin oxynitride film during RTP oxidation process in N2/O2 mixed gas ambient. The nitrogen incorporated can improve the integrity of thin oxynitride film and the interface state between the Si-substrate and ultra-thin oxynitride film.
author2	Kow-Ming Chang
author_facet	Kow-Ming Chang Chu-Feng Chen 陳巨峰
author	Chu-Feng Chen 陳巨峰
spellingShingle	Chu-Feng Chen 陳巨峰 The investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process
author_sort	Chu-Feng Chen
title	The investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process
title_short	The investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process
title_full	The investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process
title_fullStr	The investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process
title_full_unstemmed	The investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process
title_sort	investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process
publishDate	2003
url	http://ndltd.ncl.edu.tw/handle/52171899853973658131
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The investigation of 1.0 nm high-quality oxynitride gate dielectric was grown by rapid thermal process

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